AO4830L

Description：MOSFET 2N-CH 80V 3.5A 8SOIC
Series：-

SKU:ef8dfb199361 Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 80V 3.5A 8SOIC
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Bulk
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：80V
Current - Continuous Drain (Id) @ 25°C：3.5A
Rds On (Max) @ Id, Vgs：75mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：770pF @ 40V
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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AO4830L

Overview

The AO4830L is a dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to deliver low on-resistance and gate charge, making it suitable for load switch and PWM applications. The device features an 80V drain-source breakdown voltage and a continuous drain current of 3.5A at 25°C. Key electrical parameters include a maximum RDS(ON) of 75mΩ at VGS=10V and ID=3.5A, with a typical gate charge of 8.1nC at 10V. It operates within a junction temperature range of -55°C to 150°C and is housed in an SOIC-8 package.

Feature Summary

Dual N-channel configuration integrated into a single compact surface-mount package
Advanced trench technology providing optimized on-resistance and switching performance
Validated unclamped inductive switching (UIS) capability for robust operation

Applications

Load switching circuits
Pulse width modulation (PWM) control applications

Procurement Notes

Verify the specific manufacturer part number against official datasheets before procurement. Confirm that the component meets required RoHS compliance standards if applicable to your manufacturing process. Ensure thermal management designs account for the specified junction-to-ambient resistance values under actual operating conditions.

Selection Notes

Select this component when a dual N-channel MOSFET solution is required for space-constrained designs. Consider the 80V rating and 3.5A continuous current limits for appropriate circuit sizing. Evaluate the gate charge specifications against driver capabilities to ensure efficient switching speeds in high-frequency applications.

Part Context

This component belongs to the AO48xx series of dual MOSFETs from Alpha & Omega Semiconductor. These devices are designed to replace discrete dual-transistor setups, reducing board space and parasitic inductance. The AO4830L specifically targets applications requiring moderate voltage ratings with efficient power handling in standard SOIC packages.