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The AO5804EL is a dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and minimal gate charge, supporting operation with gate voltages as low as 1.8V while maintaining a 12V maximum gate-source voltage rating. The device features an ESD protection rating of 2000V HBM and is available in lead-free packaging compliant with RoHS and Sony 259 specifications. Designed for surface mount applications, it serves as a reliable switching component in power management circuits.
Verify the specific suffix EL against official manufacturer documentation to confirm package type and tape-and-reel specifications. Ensure compliance requirements match project standards, as standard products meet RoHS and Sony 259 guidelines. Cross-reference part numbers with authorized distributors to confirm availability and authenticity before procurement.
Select this component when a dual N-channel MOSFET with low gate threshold voltage is required for efficient switching. The common-drain configuration supports both uni-directional and bi-directional applications. Verify that the operating voltage does not exceed the 12V maximum gate-source rating and that thermal management aligns with the device's power dissipation capabilities.
This component belongs to the AO880x series of dual N-channel enhancement mode field effect transistors from Alpha & Omega Semiconductor. It shares architectural similarities with parts like the AO8804, utilizing trench technology for improved performance. The dual configuration allows for compact designs in applications requiring multiple switching elements within a single package.
The AO8804 is listed as a similar part number with identical electrical descriptions. Verify pin compatibility and package dimensions before substitution. Other members of the AO880x family may offer alternative configurations but require validation of specific parameters.