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The AO6401A is a P-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve low gate charge and excellent on-resistance, supporting operation with gate voltages as low as 2.5V. Key electrical parameters include a drain-source voltage (VDS) of -30V and a continuous drain current (ID) of -5.0A at VGS = -10V. The device offers an on-resistance (RDS(ON)) of less than 44mΩ at VGS = -10V, 55mΩ at VGS = -4.5V, and 82mΩ at VGS = -2.5V.
Verify the manufacturer source carefully, as multiple vendors produce this part number. Confirm that the specific datasheet matches the Alpha & Omega Semiconductor specifications for RDS(ON) values and package type. Ensure compliance requirements such as RoHS are explicitly stated in the provided documentation before procurement.
Select this component when a P-channel MOSFET with a -30V rating and -5A current capacity is required. Consider the low gate drive requirement of 2.5V for compatibility with logic-level control signals. Evaluate the thermal performance based on the specific RDS(ON) value corresponding to your operating gate voltage.
This component belongs to the family of P-channel enhancement mode field effect transistors from Alpha & Omega Semiconductor. It shares design characteristics with similar models like the AO6401L, which is electrically identical but offered as a green product option. The AO6401A is distinct from N-channel variants and higher-power devices in the manufacturer's portfolio.
The AO6401L is electrically identical to the AO6401A and serves as a direct functional substitute. Verify that any alternative replacement maintains the same -30V VDS and -5A ID ratings to ensure circuit compatibility.