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The AO6401AL is a P-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and gate charge, supporting operation with gate voltages as low as 2.5V. Key electrical parameters include a drain-source voltage of -30V and a continuous drain current of -5.0A at VGS = -10V. The device features an on-resistance of less than 44mΩ at VGS = -10V, 55mΩ at VGS = -4.5V, and 82mΩ at VGS = -2.5V.
Verify the specific suffix 'L' indicates Green Product compliance against ROHS and Sony 259 specifications. Confirm that the AO6401AL is electrically identical to the standard AO6401 variant while ensuring the packaging matches the required tape and reel format for automated assembly processes.
Select this component when a compact P-channel MOSFET is required for low-voltage gate drive scenarios. The low threshold voltage capability allows direct interfacing with 3.3V logic systems. Ensure the thermal management design accommodates the power dissipation limits defined in the datasheet for the SOT-323 package.
This part belongs to the AO6401 family of P-channel MOSFETs from Alpha & Omega Semiconductor. The AO6401 series is designed for general-purpose switching applications where space constraints and efficiency are critical. The AO6401AL variant specifically denotes the lead-free, environmentally compliant version of the standard AO6401 device.
The AO6401L is electrically identical to the AO6401A and serves as a direct functional substitute. Verify pinout compatibility and package dimensions before substitution.