SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The AO6402AL is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It features a maximum drain-source voltage of -30V and a continuous drain current of -5.8A at 25°C. The device utilizes a SOT-23 surface-mount package with three pins. Key electrical characteristics include a maximum gate-source voltage of ±12V, a power dissipation of 1.4W, and an operating junction temperature range from -55°C to +150°C. Input capacitance is specified at 1200pF when Vds is -15V.
Verify the specific suffix 'AL' against official Alpha & Omega Semiconductor documentation to confirm exact binning or tape-and-reel specifications. Ensure component authenticity through authorized distribution channels. Confirm that the requested part matches the standard AO6402A electrical parameters if datasheet details for the specific suffix are unavailable.
Select this component for designs requiring a -30V P-Channel MOSFET in a small footprint. Evaluate thermal performance based on the 1.4W dissipation limit in the SOT-23 package. Compare on-resistance values at relevant gate drive voltages to ensure compatibility with system logic levels and efficiency requirements.
This component belongs to the AO6402 series of P-Channel MOSFETs from Alpha & Omega Semiconductor. The series is designed for general-purpose switching applications where space constraints and low voltage operation are primary considerations. The AO6402AL variant shares core electrical characteristics with the standard AO6402A model.
Direct substitutes may include AO6402A or AO6402B from Alpha & Omega Semiconductor. Cross-manufacturer equivalents should be verified for matching pinout, voltage ratings, and current capabilities.