ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 20V 8.8A 6TSOP
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：8.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 10V
- Rds On (Max) @ Id, Vgs：18mOhm @ 8.8A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：2200 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-TSOP
- Package / Case：SC-74, SOT-457
Download product information
Overview
The AO6408 is a dual N-channel MOSFET array manufactured by Alpha & Omega Semiconductor. It features a 30V drain-source voltage rating and supports continuous drain currents of 12A per channel at 25°C. The device utilizes advanced trench technology to achieve low on-resistance, specified as less than 17mΩ at VGS=10V and less than 20mΩ at VGS=4.5V. Packaged in an 8-pin TSSOP surface-mount configuration, it operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Dual N-channel configuration for space-efficient circuit design
- Advanced trench MOSFET technology for enhanced performance
- Logic-level gate drive capability for direct microcontroller interfacing
Applications
- DC-DC converter synchronous rectification
- Load switching applications
- Power management circuits
Procurement Notes
Verify the specific suffix code on the component marking against the manufacturer's official datasheet to confirm pinout compatibility and electrical tolerances. Ensure the procurement source provides documentation confirming RoHS compliance and lead-free status as required for modern assembly processes.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage power paths. The logic-level threshold allows for efficient driving from standard 3.3V or 5V logic sources without additional gate drivers, simplifying system architecture.
Part Context
This part belongs to the AOS dual MOSFET family designed for portable electronics and battery-powered devices. It serves as a complementary alternative to single-channel high-current packages where board space is constrained but dual-switch functionality is necessary for bridge or half-bridge topologies.
Replacement Considerations
Cross-reference with AO6409 (P-channel variant) for complementary pairs. Verify pin-to-pin compatibility with other 8-TSSOP dual N-channel MOSFETs before substitution.
