AO6409A

$0.60

Description：MOSFET P-CH 20V 5.5A 6TSOP
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e6453cef84aa Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 5.5A 6TSOP
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：41mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id：900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：905 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：6-TSOP
Package / Case：SC-74, SOT-457

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AO6409A

Overview

The AO6409A is a 20V P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver low gate charge and excellent on-resistance, supporting operation with gate voltages as low as 1.8V. The device features an ESD-protected structure and is housed in a TSOP6 package. Key electrical parameters include a drain-source voltage of -20V, a continuous drain current of -5.5A at VGS=-4.5V, and a maximum junction temperature range of -55°C to 150°C.

Feature Summary

Advanced trench technology provides low gate charge and excellent RDS(ON).
Capable of operation with gate voltages as low as 1.8V.
Integrated ESD protection for enhanced reliability.

Applications

Load switch applications

Procurement Notes

Verify the specific datasheet revision (Rev 4.1) and manufacturer documentation before integration. Confirm that the TSOP6 package dimensions align with the target PCB footprint. Ensure thermal management strategies account for the specified junction-to-ambient resistance values under actual operating conditions. Validate compliance with RoHS standards and export control regulations relevant to the deployment region.

Selection Notes

Select this component for circuits requiring a compact P-Channel MOSFET with low gate drive requirements. The ability to operate effectively at VGS levels down to 1.8V makes it suitable for logic-level switching applications. Consider the thermal characteristics and power dissipation limits when designing for high-current scenarios or elevated ambient temperatures.

Part Context

This part belongs to the Alpha & Omega Semiconductor lineup of power management discrete semiconductors. As a P-Channel MOSFET, it serves as a fundamental switching element in power distribution networks. The TSOP6 packaging allows for surface-mount assembly, facilitating space-constrained designs in consumer electronics and portable devices.