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The AO6415 is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to deliver low on-resistance and gate charge, supporting operation with gate voltages as low as 2.5V. The device features a Drain-Source Voltage (VDS) of -20V and a continuous Drain Current (ID) of -3.3A at VGS=-10V. On-resistance (RDS(ON)) is specified as less than 82mΩ at VGS=-10V, less than 100mΩ at VGS=-4.5V, and less than 140mΩ at VGS=-2.5V. It is housed in a TSOP6 package.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm environmental compliance status, such as RoHS or lead-free specifications. Ensure that the procurement channel sources components directly from authorized distributors to guarantee authenticity and traceability. Cross-reference the part number with the latest datasheet revision to confirm electrical characteristics match the intended design requirements before finalizing orders.
Select this component for circuits requiring a compact P-Channel MOSFET with a 20V voltage rating. Consider the thermal resistance values when designing heat dissipation strategies, as junction-to-ambient impedance varies based on board copper area and airflow conditions. Evaluate the gate threshold voltage range to ensure reliable turn-on and turn-off behavior within the target system's control voltage levels.
This component belongs to the Alpha & Omega Semiconductor lineup of power management discrete semiconductors. It is designed for general-purpose switching tasks where space constraints and efficiency are priorities. The TSOP6 package allows for surface-mount integration into dense printed circuit board layouts common in portable electronics and computing peripherals.
When evaluating substitutes, verify that the alternative device maintains a compatible Drain-Source Voltage of at least -20V and a continuous current rating equal to or exceeding -3.3A. Ensure the replacement offers similar RDS(ON) characteristics at the operating gate voltage to maintain equivalent power loss profiles.
The absolute maximum Gate-Source Voltage (VGS) rating is ±12V.
Yes, the device includes an internal body diode with a continuous current rating of -1.5A and a reverse recovery time of 6.1ns.