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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 3.4A 6TSOP
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.4A, 2.3A
- Rds On (Max) @ Id, Vgs：60mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：285pF @ 15V
- Power - Max：1.15W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-74, SOT-457
- Supplier Device Package：6-TSOP
- Grade：-
- Qualification：-
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Overview
The AO6601 is a complementary enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It integrates an N-channel and a P-channel MOSFET within a single TSOP6 package, utilizing advanced trench technology to achieve low on-resistance and gate charge. The N-channel device supports a drain-source voltage of 30V with a continuous drain current of 3.4A at VGS=10V. The P-channel counterpart provides a -30V breakdown and a -2.3A continuous current capability at VGS=-10V. Both transistors operate within a junction temperature range of -55°C to 150°C.
Feature Summary
- Complementary N-Channel and P-Channel Enhancement Mode Field Effect Transistor
- Advanced Trench Technology for Low On-Resistance and Gate Charge
- High-Speed Power Inverter Configuration
Applications
- High-speed power inverter circuits
- General purpose switching applications
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact electrical tolerances or packaging variations. Confirm RoHS compliance status directly with the supplier. Ensure the component meets the intended consumer market qualification requirements as specified in the datasheet.
Selection Notes
Select this component for designs requiring a matched complementary pair in a compact footprint. Evaluate thermal management based on the junction-to-ambient resistance values provided for FR-4 boards. Verify that the required gate drive voltages align with the specified RDS(ON) performance curves for optimal efficiency.
Part Context
This part belongs to the AO6601 series of complementary MOSFETs from Alpha & Omega Semiconductor. It is designed specifically for consumer market applications where space constraints and switching speed are critical factors. The integrated nature of the N-channel and P-channel devices simplifies board layout compared to discrete solutions.
Replacement Considerations
Direct replacements must match the TSOP6 package and provide equivalent 30V ratings with comparable on-resistance characteristics. Verify pinout compatibility and ensure the substitute component meets the same thermal and electrical specifications for both N-channel and P-channel sections.
FAQ
What is the maximum continuous drain current for the N-channel MOSFET?
The maximum continuous drain current for the N-channel MOSFET is 3.4A when measured at a gate-source voltage of 10V.
What is the typical total gate charge for the N-channel device?
The typical total gate charge (Qg) for the N-channel device is 10nC when tested at a gate-source voltage of 10V.
What is the operating temperature range for the AO6601?
The junction and storage temperature range for the AO6601 is -55°C to 150°C.
