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The AO6802 is a dual N-channel MOSFET manufactured by Alpha & Omega Semiconductor. It features a maximum drain-source voltage of 30V and a continuous drain current of 3.5A at VGS=10V. The device utilizes advanced trench technology to achieve low on-resistance, specified as less than 50mΩ at VGS=10V and less than 70mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage ranging from 1.5V to 2.5V, total gate charge of 4.05nC at 10V, and input capacitance of 210pF. The component operates within a junction temperature range of -55°C to 150°C and is housed in a TSOP-6 surface-mount package.
Verify the specific datasheet revision against the manufacturer's official documentation before finalizing design specifications. Confirm that the TSOP-6 package dimensions align with the target PCB footprint. Ensure thermal management strategies account for the junction-to-ambient resistance values provided in the static characteristics section of the data sheet.
Select this component when a compact dual N-channel solution is required for 30V logic-level switching. The low gate charge facilitates faster switching speeds with minimal driver current requirements. Evaluate the on-resistance performance at the intended operating gate voltage to ensure efficiency meets system constraints under expected load conditions.
The AO6802 belongs to the Alpha & Omega Semiconductor family of dual MOSFET arrays designed for space-constrained designs. It serves as an alternative to discrete single-channel implementations where board area is limited. The device integrates two identical N-channel FETs into a single six-terminal package to simplify assembly and reduce overall component count.
Direct pin-compatible replacements must maintain the 30V rating, TSOP-6 package, and comparable RDS(ON) thresholds. Verify that any substitute part supports the same logic-level gate drive voltages and thermal dissipation characteristics to ensure circuit compatibility without redesign.