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The AO7401 is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge within a compact SOT363 (SC-70) footprint. The device features a drain-source voltage of -30V and supports continuous drain currents up to -1.4A at VGS=-10V. Key electrical parameters include an on-resistance of less than 115mΩ at VGS=-10V, less than 140mΩ at VGS=-4.5V, and less than 200mΩ at VGS=-2.5V. It operates with gate voltages as low as 2.5V and has a junction temperature range of -55°C to 150°C.
Verify the specific package type and marking code against the official Alpha & Omega Semiconductor datasheet before procurement. Ensure that the supplier provides documentation confirming RoHS compliance and halogen-free status if required by your design specifications. Cross-reference the part number AO7401 with the manufacturer's latest revision history to confirm electrical parameter consistency.
Select the AO7401 when a compact P-Channel MOSFET is required for low-current switching applications. Its low gate threshold voltage makes it suitable for systems driven by 2.5V logic levels. Consider its thermal resistance characteristics and power dissipation limits relative to the expected duty cycle and ambient temperature conditions of the target application.
The AO7401 belongs to the family of P-Channel Enhancement Mode Field Effect Transistors produced by Alpha & Omega Semiconductor. It is designed using advanced trench technology to optimize performance in terms of on-resistance and gate charge. This component is distinct from N-Channel variants and larger package options, specifically targeting space-constrained, low-power switching environments.
No public confirmed substitute part numbers are available in the provided source material.