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The AO7407 is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge, supporting operation with gate voltages as low as 1.8V. The device features a drain-source voltage of -20V and a continuous drain current of -1.2A at VGS=-4.5V. On-resistance values are less than 135mΩ at VGS=-4.5V, less than 170mΩ at VGS=-2.5V, and less than 220mΩ at VGS=-1.8V. It is housed in an SC-70 (SOT-323) package.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and compliance specifications. Confirm that the component meets all applicable RoHS standards required for your assembly process. Cross-reference the datasheet revision number to ensure compatibility with your design parameters before finalizing procurement orders.
Select this component for applications requiring low-side or high-side switching with minimal gate drive requirements. The low on-resistance at reduced gate voltages makes it appropriate for battery-powered systems. Ensure the thermal management design accounts for the junction-to-ambient resistance specified in the datasheet to maintain safe operating temperatures under load.
This part belongs to the family of P-Channel MOSFETs from Alpha & Omega Semiconductor. It is designed to offer improved performance over standard planar technologies through the use of trench gate architecture. The SC-70 package provides a compact footprint suitable for space-constrained portable electronics and consumer devices.
Check for electrically identical alternatives within the same product line. Verify pinout compatibility and package dimensions when substituting with components from other manufacturers to ensure mechanical fit and electrical equivalence in the target circuit.
The AO7407 supports operation with gate voltages as low as 1.8V.
The maximum drain-source voltage (BVDSS) is rated at -20V.