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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V SC70-6
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：520mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id：900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：140pF @ 10V
- Power - Max：300mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-70-6
- Grade：-
- Qualification：-
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Overview
The AO7801 is a dual P-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to deliver low on-resistance and gate charge within an SC-70-6L (SOT-363) footprint. The device supports gate voltages as low as 1.8V and features ESD protection rated at 2kV HBM. Key electrical parameters include a drain-source voltage of -20V, a continuous drain current of -0.6A at 25°C, and a maximum on-resistance of 520mΩ at VGS=-4.5V. Thermal characteristics specify a junction temperature range from -55°C to 150°C.
Feature Summary
- Dual P-channel configuration in a compact SOT-363 package
- Advanced trench technology for low on-resistance and gate charge
- Operates with gate voltages as low as 1.8V
- ESD protection rated at 2kV Human Body Model
Applications
- Load switching
- Low current inverters
- Low current DC-DC converters
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation before procurement. Confirm that the component meets the required thermal management specifications for the intended application environment. Ensure compliance with consumer market design guidelines as critical life support applications are not authorized.
Selection Notes
Select this component for designs requiring a dual P-channel MOSFET in a small surface-mount footprint. Evaluate the thermal resistance values relative to the PCB copper area and airflow conditions. Consider the gate threshold voltage requirements to ensure compatibility with the driving logic levels in the target circuit.
Part Context
The AO7801 belongs to the family of dual P-channel enhancement mode field effect transistors produced by Alpha & Omega Semiconductor Inc. It is designed for general-purpose switching applications where space constraints and low drive voltage capabilities are primary design considerations.
Replacement Considerations
AO8801
FAQ
What is the maximum gate-source voltage rating?
The absolute maximum rating for the gate-source voltage is ±8V.
How does the on-resistance vary with gate voltage?
The maximum on-resistance is 520mΩ at VGS=-4.5V, 700mΩ at VGS=-2.5V, and 950mΩ at VGS=-1.8V.
What is the body diode reverse recovery time?
The body diode reverse recovery time is typically 10ns and maximally 13ns when tested at IF=-0.6A and dI/dt=100A/μs.
