AO8801AL

Overview

The AO8801AL is a dual P-channel enhancement mode MOSFET manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to achieve low on-resistance and gate charge, supporting operation with gate voltages as low as 1.8V. The device features a -20V drain-source voltage rating and a continuous drain current of -4.5A at VGS=-10V. On-resistance is specified as less than 42mΩ at VGS=-4.5V, 54mΩ at VGS=-2.5V, and 68mΩ at VGS=-1.8V. Packaged in an 8-TSSOP surface-mount configuration, it includes ESD protection rated at 3000V HBM.

Feature Summary

• Advanced trench technology for excellent RDS(ON) and low gate charge
• Logic-level gate drive capability down to 1.8V
• Integrated ESD protection rated at 3000V HBM

Applications

• Load switch applications
• PWM (Pulse Width Modulation) control circuits

Procurement Notes

Verify the specific ordering suffix 'L' against the manufacturer's official documentation to confirm compliance with Green Product specifications, including ROHS and Sony 259 standards. Confirm that the electrical characteristics remain identical to the standard AO8801A variant when sourcing this component.

Selection Notes

Select this component for designs requiring dual P-channel switching with logic-level compatibility. Ensure the application voltage does not exceed the -20V VDS limit and that thermal management accounts for the 1.5W power dissipation rating at 25°C ambient temperature. Verify gate drive voltage levels align with the specified RDS(ON) thresholds.

Part Context

This part belongs to the AO8801 family from Alpha & Omega Semiconductor. The AO8801A datasheet confirms that the AO8801L is electrically identical to the AO8801A, serving primarily as a Green Product ordering option compliant with environmental regulations.

Replacement Considerations

The AO8801A is electrically identical to the AO8801L. Other similar parts include the AO8804, though it is an N-channel device.