AOB11S65L

Product Detailed Parameters

• Description：MOSFET N-CH 650V 11A TO263
• Series：aMOS™
• Mfr：Alpha & Omega Semiconductor Inc.
• Package：Tape & Reel (TR),Cut Tape (CT)
• FET Type：N-Channel
• Technology：MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)：650 V
• Current - Continuous Drain (Id) @ 25°C：11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)：10V
• Rds On (Max) @ Id, Vgs：399mOhm @ 5.5A, 10V
• Vgs(th) (Max) @ Id：4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs：13.2 nC @ 10 V
• Vgs (Max)：±30V
• Input Capacitance (Ciss) (Max) @ Vds：646 pF @ 100 V
• FET Feature：-
• Power Dissipation (Max)：198W (Tc)
• Operating Temperature：-55°C ~ 150°C (TJ)
• Grade：-
• Qualification：-
• Mounting Type：Surface Mount
• Supplier Device Package：TO-263 (D2PAK)
• Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Download product information