AOB12N60FDL

$1.33

Description：MOSFET N-CH 600V 12A TO263
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e8ce10e8a08e Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 12A TO263
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：650mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：50 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：2010 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：278W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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AOB12N60FDL

Overview

The AOB12N60FDL is an N-channel Power MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a 600V drain-source voltage rating and a continuous drain current of 12A at case temperature. The device utilizes a TO-263 (D2PAK) surface-mount package, offering a maximum power dissipation of 278W under case conditions. Designed for high-voltage switching applications, it provides robust performance within a compact form factor suitable for industrial and consumer electronics.

Feature Summary

High-voltage N-channel architecture rated for 600V operation
Surface-mount construction in a TO-263 D2PAK package
Capable of handling 12A continuous drain current at elevated temperatures

Applications

Industrial motor control systems
Power supply unit output stages
High-voltage switching circuits

Procurement Notes

Verify component authenticity through authorized distribution channels due to obsolete status. Confirm RoHS compliance documentation matches specific manufacturing lot requirements. Ensure thermal management design accounts for the 278W case dissipation limit during integration planning.

Selection Notes

Select this component for designs requiring 600V blocking capability with moderate current handling in a surface-mount footprint. Evaluate thermal resistance parameters against system heat sinking capabilities. Consider availability constraints given the discontinued product status when finalizing long-term production plans.

Part Context

This single N-channel MOSFET belongs to Alpha & Omega Semiconductor's discrete transistor portfolio. It serves as a solid-state switch for medium-power electronic applications. The TO-263 package facilitates automated assembly while providing adequate thermal pathways for high-current operations in constrained board spaces.