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Product Detailed Parameters
- Description：MOSFET N-CH 600V 20A TO263
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：190mOhm @ 7.6A, 10V
- Vgs(th) (Max) @ Id：4.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1935 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：208W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
AOB190A60L is a surface-mount N-channel MOSFET from Alpha & Omega Semiconductor Inc., utilizing the aMOS5™ technology. It features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 20 A at case temperature. The device exhibits a maximum on-resistance (Rds On) of 190 mΩ at Vgs = 10 V and Id = 7.6 A. Key electrical parameters include a gate charge (Qg) of 34 nC at 10 V, an input capacitance (Ciss) of 1935 pF at 100 V, and a gate-source threshold voltage (Vgs(th)) of 4.6 V max at 250 µA. The component operates within a junction temperature range of -55°C to 150°C and is housed in a TO-263(D2PAK) package with a power dissipation rating of 208 W.
Feature Summary
- N-channel enhancement mode field effect transistor designed for high-voltage switching applications
- Advanced aMOS5™ trench technology providing low on-resistance characteristics
- Robust thermal performance with high power dissipation capability in surface-mount packaging
Applications
- High-voltage power supply circuits
- Industrial motor control systems
- General-purpose switching applications requiring 600V isolation
Procurement Notes
Verify the specific ordering suffix and revision level against the manufacturer's latest datasheet before procurement. Confirm RoHS compliance status and moisture sensitivity level requirements for your assembly process. Check for active production status as this part may be subject to change or obsolescence notices. Ensure the supplier provides traceability documentation matching the original manufacturer's specifications.
Selection Notes
Select this component when a 600V N-channel MOSFET with moderate current handling is required in a D2PAK package. Compare Rds On and gate charge values against alternative parts to ensure compatibility with your driver circuitry. Consider the thermal resistance of the TO-263 package for your heat sinking strategy. Verify that the 4.6V threshold voltage aligns with your logic drive levels.
Part Context
The AOB190A60L belongs to the AOB series of surface-mount power MOSFETs from Alpha & Omega Semiconductor. It is part of the aMOS5™ product line, which focuses on optimizing the balance between on-resistance and gate charge for efficient power conversion. This specific model represents a 600V variant within the broader family of high-voltage discrete semiconductors offered by the manufacturer.
Replacement Considerations
AOB190A60CL is listed as a manufacturer-recommended replacement. Verify pinout compatibility and electrical parameter equivalence before substitution.
