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Product Detailed Parameters
- Description：N
- Series：AlphaSGT™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：57A (Ta), 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：180 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：9985 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：8.3W (Ta), 272W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The AOB2140L is a 40V N-Channel AlphaSGT™ Power MOSFET manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The device features a TO-263 package with a drain connected to the tab for efficient thermal dissipation. Key electrical characteristics include a continuous drain current of 19A at VGS=10V, an on-resistance below 1.5mΩ at VGS=10V, and below 2mΩ at VGS=4.5V. It is rated for a maximum junction temperature of 175°C.
Feature Summary
- Utilizes AlphaSGT™ trench technology for optimized performance
- Features low gate resistance and low gate charge for efficient switching
- Demonstrates high ruggedness with 100% UIS testing
- Includes 100% gate resistance verification
Applications
- DC Motor Driver
- Synchronous Rectification in DC/DC Converters
- Synchronous Rectification in AC/DC Converters
Procurement Notes
Verify the specific ordering suffix 'L' corresponds to the Green Product option compliant with RoHS and Halogen-Free specifications. Confirm that the AOB2140L variant is supplied in Tape & Reel format within the TO-263 package. Ensure compatibility with standard surface-mount assembly processes for D2PAK-style components.
Selection Notes
Select this component for applications requiring robust inductive load handling due to verified Unclamped Inductive Switching (UIS) capability. The low RDS(ON) values at both 10V and 4.5V gate drive voltages make it suitable for various logic-level control interfaces. Consider the thermal resistance characteristics when designing heatsinking solutions for high-current synchronous rectification tasks.
Part Context
This part belongs to the AOS Power MOSFET portfolio utilizing AlphaSGT™ technology. It is electrically identical to the AOT2140L, differing primarily in packaging form factor. The TO-263 package provides a balance between power handling capabilities and surface-mount convenience, distinguishing it from through-hole alternatives like the TO-220 variant.
Replacement Considerations
The AOT2140L is an electrically identical alternative available in a TO-220 through-hole package. Designers must account for the mechanical footprint differences between the TO-263 SMD and TO-220 packages when substituting parts.
