AOB2606L

$1.57

Description：MOSFET N-CH 60V 13A/72A TO263
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:676f1b7d6c2a Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 13A/72A TO263
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：13A (Ta), 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：6.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：75 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4050 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 115W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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AOB2606L

Overview

The AOB2606L is a surface-mount N-channel MOSFET from Alpha & Omega Semiconductor, utilizing Trench technology for optimized high-frequency switching. It features a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 72A at VGS=10V. The device exhibits an extremely low on-state resistance (RDS(ON)) of less than 6.5mW at VGS=10V and ID=20A. Key electrical parameters include a gate threshold voltage (VGS(th)) ranging from 2.5V to 3.5V, total gate charge (Qg) of 53nC to 75nC at 10V, and input capacitance (Ciss) of 4050pF. It supports a maximum junction temperature of 175°C and has been subjected to 100% UIS and Rg testing.

Feature Summary

Utilizes advanced Trench MOSFET technology to minimize both conduction and switching power losses through low RDS(ON), Ciss, and Coss values.
Features 100% Unclamped Inductive Switching (UIS) testing to ensure robustness against inductive load failures.
Includes 100% Gate Resistance (Rg) testing for consistent switching performance and reliability.

Applications

Boost converters
Synchronous rectifiers
Consumer power supplies
Telecom power supplies
Industrial power supplies
LED backlighting

Procurement Notes

Verify the specific package variant required, as the datasheet covers TO-263 (D2PAK), TO-220, and TO-220F packages under the same part number family. Confirm that the application environment respects the absolute maximum ratings, particularly the 175°C junction temperature limit and thermal impedance constraints. Ensure compatibility with the specified gate drive voltages for optimal RDS(ON) performance.

Selection Notes

Select this component for applications requiring high efficiency in high-frequency switching environments due to its minimized switching losses. Consider the thermal management requirements carefully, as the junction-to-ambient thermal resistance varies significantly by package type. Verify that the 60V rating provides sufficient headroom for the specific circuit's peak voltage transients.

Part Context

The AOB2606L belongs to the AOT2606L/AOB2606L/AOTF2606L series of 60V N-Channel MOSFETs manufactured by Alpha & Omega Semiconductor. These devices are designed using Trench MOSFET technology to deliver efficient high-frequency switching performance. The series is characterized by low on-resistance and capacitance, making it suitable for various power supply topologies.

Replacement Considerations

Direct substitutes within the same series include AOT2606L (TO-220 package) and AOTF2606L (TO-220F package). When replacing, verify that the physical footprint and pinout of the new package match the existing PCB design, as thermal characteristics differ between surface mount and through-hole variants.