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Product Detailed Parameters
- Description：MOSFET N-CH 60V 18A/140A TO263
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：18A (Ta), 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：3.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：80 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6800 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta), 268W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The AOB266L is a 60V N-Channel MOSFET utilizing Trench technology optimized for high-frequency switching. It features an extremely low RDS(ON) of less than 3.5mΩ at VGS=10V and less than 4.0mΩ at VGS=6V, with a continuous drain current (ID) of 78A at TC=25°C. The device includes 100% UIS and Rg testing. Thermal resistance from junction to case (RqJC) is 0.56°C/W. Operating temperature range spans -55°C to 175°C.
Feature Summary
- Trench MOSFET technology minimizes conduction and switching power losses through low on-resistance and capacitance.
- High current capability suitable for demanding power conversion applications.
- Robust avalanche performance verified by 100% Unclamped Inductive Switching (UIS) testing.
Applications
- Boost converters
- Synchronous rectifiers
- Consumer power supplies
- Telecom power supplies
- Industrial power supplies
- LED backlighting
Procurement Notes
Verify the specific package variant required, as the AOB266L designation corresponds to the TO-263 D2PAK form factor. Confirm thermal management requirements align with the specified junction-to-case thermal resistance. Ensure the design accounts for the maximum junction temperature limits during operation. Check for RoHS compliance status if environmental regulations apply to the final assembly.
Selection Notes
Select this component when low on-resistance and high current handling are critical for efficiency in 60V systems. The TO-263 package offers a balance between thermal dissipation and mounting flexibility. Consider the gate charge characteristics for driving requirements in high-frequency switching environments compared to standard planar devices.
Part Context
This part belongs to the AOT/AOB series of N-Channel MOSFETs from Alpha & Omega Semiconductor. These devices share similar electrical specifications but differ in packaging formats such as TO-220 or TO-220F. The AOB266L specifically utilizes the surface-mount TO-263 package for automated assembly processes.
Replacement Considerations
Direct substitutes include AOT266L and AOTF266L, which share identical electrical characteristics but utilize different packages (TO-220 and TO-220F respectively). Verify pinout compatibility and thermal pad configurations before substitution.
