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Product Detailed Parameters
- Description：MOSFET N-CH 600V 27A TO263
- Series：aMOS™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：160mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：26 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1294 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：357W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The AOB27S60L is a 600V N-channel power MOSFET from Alpha & Omega Semiconductor, utilizing the αMOS™ process. It features a maximum drain-source voltage of 600V and continuous drain current of 27A at 25°C case temperature. The device offers a typical gate charge of 26nC and a maximum on-resistance of 0.16Ω. It supports a peak diode recovery dv/dt of 480 V/ns and includes 100% UIS testing.
Feature Summary
- Advanced αMOS™ high voltage process for robust switching performance
- Guaranteed avalanche capability with 100% UIS testing
- High peak diode recovery dv/dt ruggedness
Applications
- Offline power supply designs
- Switching applications requiring high reliability
- Power conversion circuits
Procurement Notes
Verify the specific package type (TO-263 D2PAK) against your design requirements. Confirm that the component meets RoHS3 standards if required by your manufacturing process. Check the datasheet revision date to ensure compatibility with your reference designs. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values provided in the documentation.
Selection Notes
Select this component for applications requiring high voltage handling and robust avalanche energy ratings. Consider the low gate charge for efficient driver design. Evaluate the thermal characteristics against your system's heat dissipation capabilities. Verify that the continuous and pulsed current ratings meet the operational demands of the target circuit.
Part Context
This part belongs to the AOT/AOB series of power transistors designed for offline power supplies. It shares similar electrical characteristics with the AOT27S60L but differs in packaging. The series emphasizes low RDS(on) and Qg for improved efficiency in switching applications.
Replacement Considerations
The AOT27S60L is listed as a related product with identical electrical specifications but in a TO-220 package. Verify pinout and thermal interface compatibility before substitution.
