AOB409L

$0.40

Description：MOSFET P-CH 60V 5A/31.5A TO263
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:0fc251296dd0 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 60V 5A/31.5A TO263
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：5A (Ta), 31.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：38mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：52 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2953 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 83.3W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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AOB409L

Overview

The AOB409L is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench MOSFET technology to achieve extremely low on-resistance and is housed in a TO-263 (D2PAK) package. The device features a drain-source voltage of -60V, a continuous drain current of -31.5A at VGS=-10V, and a maximum junction temperature of 175°C. It has been subjected to 100% UIS and Rg testing.

Feature Summary

Advanced trench MOSFET technology provides extremely low RDS(ON).
Low resistance package design enhances thermal performance.
Subjected to 100% Unclamped Inductive Switching (UIS) testing.
Subjected to 100% Gate Resistance (Rg) testing.

Applications

Boost converters
Synchronous rectifiers for consumer power supplies
Telecom power supplies
Industrial power supplies
LED backlighting

Procurement Notes

Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation to confirm compliance with environmental standards such as RoHS or Sony 259 specifications. Ensure that the procurement channel sources components directly from authorized distributors to guarantee authenticity and traceability of the semiconductor device.

Selection Notes

Select this component for applications requiring high efficiency in synchronous rectification or boost conversion. Evaluate the thermal management requirements based on the junction-to-case and junction-to-ambient thermal resistances provided in the datasheet. Confirm that the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance.

Part Context

This part belongs to the family of P-Channel MOSFETs designed for power switching applications. It is characterized by its ability to handle significant current loads while maintaining low conduction losses. The TO-263 package facilitates surface-mount installation on printed circuit boards suitable for various industrial and consumer electronic environments.

Replacement Considerations

Ensure any substitute component matches the -60V drain-source voltage rating and the -31.5A continuous drain current capability. Verify that the replacement maintains compatible pinout configurations for the TO-263 package and meets similar thermal resistance specifications to ensure proper heat dissipation in the existing circuit design.