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Product Detailed Parameters
- Description：MOSFET N-CH 100V 8.2A/60A TO263
- Series：SDMOS™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：8.2A (Ta), 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：7V, 10V
- Rds On (Max) @ Id, Vgs：15.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：54 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：3220 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2.6W (Ta), 150W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The AOB412L is an N-channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a drain-source voltage (V_DSS) of 100 V and a continuous drain current (I_D) of 8.2 A at case temperature. The device utilizes a TO-263 package for surface mount installation. Key electrical characteristics include a maximum gate-source voltage (V_GS) of ±20 V and a junction temperature range of -55°C to 175°C. The component is designed for power switching applications requiring robust performance within these specified voltage and current limits.
Feature Summary
- N-channel metal-oxide semiconductor field-effect transistor construction
- High voltage capability with 100 V drain-source rating
- Surface mount packaging for automated assembly integration
Applications
- Power management circuits
- DC-DC converter switches
- Load switching applications
Procurement Notes
Verify the specific datasheet revision and ordering suffixes directly from Alpha & Omega Semiconductor official documentation. Confirm that the TO-263 package variant matches the required PCB footprint. Ensure compliance with RoHS standards if applicable to the target market regulations. Cross-reference part numbers to avoid confusion with similar series components.
Selection Notes
Select this component when a 100 V N-channel MOSFET is required in a TO-263 package. Evaluate thermal management requirements based on the 8.2 A continuous current rating. Consider the gate charge and input capacitance values for switching speed optimization in high-frequency designs. Ensure the operating voltage does not exceed the 100 V limit under all transient conditions.
Part Context
This component belongs to the discrete semiconductor category, specifically single FETs. Alpha & Omega Semiconductor produces this device as a standard power MOSFET. The TO-263 package is commonly used in medium-power applications where efficient heat dissipation is necessary without the bulk of through-hole packages.
Replacement Considerations
Check for direct pin-compatible substitutes with identical 100 V ratings and TO-263 footprints. Verify that alternative devices meet or exceed the 8.2 A current requirement and maintain compatible gate threshold voltages.
