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Product Detailed Parameters
- Description：MOSFET N-CH 75V 10A/100A TO263
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：10.2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：136 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：5640 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta), 268W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The AOB470L is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor. It features a drain-source voltage (Vdss) of 75 V and a continuous drain current (Id) of 10 A at ambient temperature, with a pulsed current capability of 100 A at case temperature. The device utilizes advanced trench technology to achieve low on-resistance and enhanced switching performance. It is housed in a surface-mount TO-263 (D2PAK) package, designed for efficient thermal dissipation with a power dissipation rating of 2.1 W at ambient and 268 W at case temperatures.
Feature Summary
- Advanced trench technology for optimized on-resistance and switching characteristics
- High pulse current handling capability suitable for demanding power applications
- Surface-mount TO-263 package design for effective thermal management
Applications
- Low-side switching in notebook CPU core power conversion circuits
- General purpose power switching applications requiring high efficiency
- DC-DC converter topologies utilizing N-channel MOSFETs
Procurement Notes
Verify component authenticity through authorized distribution channels due to obsolete status. Confirm datasheet revisions and RoHS compliance documentation prior to integration. Ensure supply chain stability as manufacturing has ceased; validate replacement part availability if long-term production support is required for end products.
Selection Notes
Select this component for designs requiring 75 V breakdown and moderate current handling in compact surface-mount form factors. Evaluate thermal constraints carefully given the TO-263 package limitations under continuous load conditions. Consider the obsolete status when planning for future product lifecycle management and potential redesign requirements.
Part Context
This N-Channel enhancement mode field effect transistor belongs to Alpha & Omega Semiconductor's portfolio of power MOSFETs. It is specifically engineered for low-voltage, high-current applications where efficiency and switching speed are critical. The device represents a solution for power management systems in portable electronics and industrial control modules.
Replacement Considerations
The manufacturer lists this part as obsolete. No specific public substitute part numbers are confirmed in the provided documentation. Designers should consult official replacement guides or contact the manufacturer directly for qualified alternative components.
