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Product Detailed Parameters
- Description：MOSFET N-CH 600V 8A TO263
- Series：aMOS5™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：600mOhm @ 2.1A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：608 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：96W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The AOB600A60L is a surface-mount N-channel power transistor from Alpha & Omega Semiconductor, utilizing aMOS5 technology. It features a drain-source voltage of 600V and a maximum junction-to-case thermal resistance of 1.3°C/W. The device supports a continuous drain current of 8A at 25°C case temperature and handles a pulsed drain current of 32A. Key electrical parameters include a maximum on-resistance of 0.6Ω at VGS=10V and a total gate charge of 11.5nC. It operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- Utilizes advanced aMOS5 trench technology for optimized performance
- Features high dv/dt ruggedness rated at 100V/ns
- Designed with low gate charge characteristics for efficient switching
- Includes robust body diode with specified reverse recovery time
Applications
- High-frequency power conversion circuits
- Synchronous rectification in DC-DC converters
- Motor control applications requiring fast switching
- Industrial power supply designs
Procurement Notes
Verify the specific package type and ordering suffix when sourcing. Confirm that the component meets RoHS compliance standards as indicated by the Green product designation. Ensure the supplier provides valid datasheets matching revision 3.2 or later to guarantee accurate parameter alignment. Check for any specific handling requirements related to moisture sensitivity levels during storage and assembly.
Selection Notes
Select this component for applications requiring a balance of voltage rating and low on-resistance in a compact surface-mount footprint. Consider the thermal resistance values when designing heatsinking solutions. Evaluate the gate charge requirements against the driving circuit capabilities to ensure optimal switching speeds. Compare the safe operating area curves with the intended load conditions to prevent device failure under transient loads.
Part Context
This part belongs to the aMOS5 family of N-channel MOSFETs from Alpha & Omega Semiconductor. It shares similar electrical characteristics with the through-hole variants AOT600A60L and AOTF600A60L but differs in physical packaging. The TO-263 D2PAK package allows for higher power dissipation compared to smaller surface-mount options while maintaining compatibility with automated assembly processes.
Replacement Considerations
Direct pin-compatible replacements within the same series include AOT600A60L and AOTF600A60L, though these utilize different packages (TO-220 and TO-220F respectively). Verify thermal management requirements when substituting between package types due to differences in junction-to-case thermal resistance.
