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The AOB66518L is a 150V N-Channel Power MOSFET utilizing Trench technology. It features a maximum drain-source voltage of 150V and continuous drain current ratings of 120A at 25°C case temperature and 73A at 100°C case temperature. The device exhibits low on-resistance, specified as less than 5mΩ at VGS=10V and 20A, and less than 5.6mΩ at VGS=8V. It supports a pulsed drain current of 480A and operates within a junction temperature range of -55°C to 175°C.
Verify the specific ordering suffix and package form factor against the manufacturer's official documentation before procurement. Confirm that the component meets RoHS and Halogen-Free compliance requirements for your assembly process. Ensure the selected variant matches the required tape and reel specifications for automated placement equipment.
Select this component based on its 150V rating and high current handling capabilities suitable for robust power switching applications. Consider the thermal characteristics, specifically the low junction-to-case resistance, when designing heatsinking solutions. Evaluate the gate charge parameters to ensure compatibility with the intended driver circuitry for optimal switching performance.
This part belongs to Alpha & Omega Semiconductor's portfolio of discrete power semiconductors. The company integrates its own wafer fabrication and packaging technologies to develop high-performance power management solutions. The AOB66518L utilizes their proprietary Trench technology to achieve enhanced electrical performance compared to standard planar devices.
Public confirmed substitute part numbers are not available in the provided source material.