AOB66919L

$0.79

Description：N
Series：AlphaSGT™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:2a1bef9570e5 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：N
Series：AlphaSGT™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：26A (Ta), 105A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：66 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3420 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：10W (Ta), 187W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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AOB66919L

Overview

The AOB66919L is a 100V N-Channel Power MOSFET utilizing AlphaSGT™ technology. It features a maximum drain-source voltage of 100V and a continuous drain current of 105A at TC=25°C. The device offers a low on-resistance of less than 6.5mΩ at VGS=10V and less than 8.5mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage of 2.6V max, total gate charge of 66nC at 10V, and input capacitance of 3420pF. It supports a maximum junction temperature of 175°C and is housed in a TO-263 package.

Feature Summary

Utilizes AlphaSGT™ trench technology for enhanced performance
Capable of high-frequency switching and synchronous rectification
Features low gate charge and low on-resistance characteristics
Includes 100% UIS and Rg testing for reliability

Applications

High frequency switching circuits
Synchronous rectification applications

Procurement Notes

Verify the specific ordering suffix to confirm the tape and reel packaging format. Ensure the component meets RoHS 2.0 and halogen-free compliance requirements for your assembly process. Confirm that the TO-263 package dimensions align with your PCB footprint design before finalizing procurement.

Selection Notes

Select this component when a 100V rating and high current capability are required. Consider the thermal resistance values for heatsinking needs, as the device supports a maximum junction temperature of 175°C. Evaluate the gate charge specifications against your driver capabilities to ensure efficient switching performance.

Part Context

This part belongs to the AlphaSGT™ family of N-Channel MOSFETs from Alpha & Omega Semiconductor Inc. It is designed for power management applications requiring robust performance. The device is manufactured using advanced trench technology to minimize conduction losses while maintaining high switching speeds.