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The AOC2417 is a 20V P-Channel MOSFET utilizing advanced trench technology. It provides excellent RDS(ON) and low gate charge, supporting operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. Key electrical parameters include a drain-source voltage of -20V, a continuous source current of -3.5A at VGS=-10V, and an on-resistance of less than 32mΩ at VGS=-10V. The device features typical ESD protection rated HBM Class 2.
Verify the specific datasheet revision (Rev.1.0 : December 2013) to ensure compatibility with design requirements. Confirm that the component is designated for the consumer market and not authorized for life support devices or systems. Ensure proper handling due to ESD sensitivity despite internal protection.
Select this component for applications requiring a compact P-Channel MOSFET with low gate drive requirements. The low on-resistance at reduced gate voltages makes it suitable for efficiency-conscious designs. Verify thermal management capabilities given the junction-to-ambient resistance values provided in the datasheet.
The AOC2417 is part of Alpha & Omega Semiconductor's portfolio of power management solutions. It is designed using advanced trench technology to deliver high performance in a small footprint. The company specializes in power ICs and discrete semiconductors for consumer, computing, and industrial markets.
Check for direct replacements within the AOC24xx series, such as the AOC2415, which shares similar voltage ratings. Ensure any substitute matches the package type and electrical characteristics precisely.
The maximum gate-source voltage (VGS) rating is ±12V.
No, the product is designed and qualified for the consumer market. Applications as critical components in life support devices are not authorized.