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Product Detailed Parameters
- Description：MOSFET 2N-CH 4WLCSP
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：10.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：4-UFBGA, WLCSP
- Supplier Device Package：4-WLCSP (1.57x1.57)
- Grade：-
- Qualification：-
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Overview
The AOC2802 is a dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. utilizing advanced trench technology. It features a common-drain configuration with a maximum source-to-drain voltage (Vss) of 20V and a continuous drain current (ID) of 6A at VGS=4.5V. The device supports low gate drive voltages down to 2.5V while maintaining a maximum gate-source voltage rating of 12V. On-resistance values are specified as less than 34mΩ at VGS=4.5V, less than 35mΩ at VGS=4.0V, less than 43mΩ at VGS=3.1V, and less than 54mΩ at VGS=2.5V.
Feature Summary
- Advanced trench technology provides excellent on-resistance and low gate charge characteristics.
- Common-drain configuration facilitates use as a unidirectional or bi-directional load switch.
- Operates with gate voltages as low as 2.5V while retaining a 12V maximum gate-source voltage rating.
- Integrated electrostatic discharge (ESD) protection.
Applications
- Unidirectional load switching
- Bi-directional load switching
Procurement Notes
Verify the specific manufacturer datasheet for the AOC2802 to confirm current production status and availability. Ensure that the common-drain pinout matches the target circuit design requirements before integration. Check for any RoHS compliance documentation if environmental regulations apply to the end product.
Selection Notes
Select the AOC2802 when a dual N-channel solution with a common-drain topology is required for low-voltage applications up to 20V. Consider its low gate threshold capability for systems driven by 2.5V logic levels. Evaluate the 6A current capacity against peak load demands to ensure adequate thermal performance within the package constraints.
Part Context
The AOC2802 belongs to the AOC280x family of dual N-channel MOSFETs from Alpha & Omega Semiconductor. This series shares similar architectural features, including trench technology and common-drain configurations. Related parts in this family include the AOC2800, AOC2804, AOC2804B, and AOC2806, which offer comparable specifications tailored for load switch applications.
Replacement Considerations
Potential substitutes within the same family include the AOC2800, AOC2804, AOC2804B, and AOC2806. Verify pin compatibility and electrical parameters such as Vss and ID before substitution. Other manufacturers offering common-drain dual N-channel MOSFETs may require schematic adjustments due to different internal configurations.
