SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The ALD1105PBL is a monolithic complementary matched MOSFET pair containing dual N-channel and dual P-channel enhancement-mode transistors in a 14-pin plastic DIP package. It features a low threshold voltage of 0.7V, low input capacitance of 3pF, and an offset voltage of 10mV. The device offers high input impedance with typical leakage currents of 100pA at room temperature. Operating within a +2V to +10V system range, it provides thermal tracking between channel pairs for precision analog applications.
Verify the specific ordering suffix 'PBL' corresponds to the 14-pin Plastic DIP package configuration when sourcing components. Confirm that the manufacturer designation Advanced Linear Devices Inc. matches the original equipment specifications. Ensure compliance with RoHS requirements as indicated by the lead-free suffix notation in official documentation.
Select this component for low-voltage systems operating between +2V and +10V where low input bias current and fast switching speed are required. The negative current temperature coefficient and matched characteristics make it suitable for precision signal switching and amplifying applications requiring minimal offset voltage.
The ALD1105PBL belongs to the ALD1105 family of complementary matched transistor pairs. It serves as a low drain current and low leakage version of the ALD1103. The internal structure consists of an ALD1116 N-channel MOSFET pair and an ALD1117 P-channel MOSFET pair integrated into a single package.
ALD1103 is a higher current variant within the same family. For direct pin-compatible replacements, verify if other manufacturers offer dual N/P-channel matched pairs with similar 10mV offset voltage and 0.7V threshold voltage specifications.
The DC current gain is limited by the gate input leakage current, which is specified at 100pA at room temperature. At a drain current of 3mA, the DC beta is approximately 300,000,000.
The device features a negative current (IDS) temperature coefficient, which aids in thermal stability when used in parallel configurations.
The maximum power dissipation rating for the device is 500mW.