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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 6A 4WLCSP
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：6A
- Rds On (Max) @ Id, Vgs：35mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1200pF @ 10V
- Power - Max：1.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：4-UFBGA, WLCSP
- Supplier Device Package：4-WLCSP (1.57x1.57)
- Grade：-
- Qualification：-
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Overview
The AOC2802 is a common-drain dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge, supporting operation with gate voltages as low as 2.5V while maintaining a 12V maximum VGS rating. The device features ESD protection and is designed for use as a unidirectional or bi-directional load switch. Key electrical parameters include a drain-source voltage (Vss) of 20V and a continuous drain current (ID) of 6A at VGS=4.5V. On-resistance values are specified as less than 34mΩ at VGS=4.5V, less than 35mΩ at VGS=4.0V, less than 43mΩ at VGS=3.1V, and less than 54mΩ at VGS=2.5V.
Feature Summary
- Common-drain configuration facilitates bidirectional current flow suitable for load switch applications.
- Advanced trench technology provides excellent on-resistance characteristics and low gate charge.
- Operates effectively with gate drive voltages as low as 2.5V.
Applications
- Unidirectional load switching
- Bi-directional load switching
Procurement Notes
Verify the specific suffix designation associated with the part number, as variations may indicate differences in packaging or tape-and-reel specifications. Confirm that the component meets required environmental standards and lead-free manufacturing criteria before integration into production designs.
Selection Notes
Select this component when a dual N-channel solution with common-drain topology is required for low-voltage power management. Ensure the application demands a 20V breakdown voltage and can utilize gate drive signals down to 2.5V for optimal efficiency and performance.
Part Context
The AOC2802 belongs to the AOC280x series of AlphaMOS devices from Alpha & Omega Semiconductor. This family includes similar parts such as the AOC2800, AOC2804, and AOC2806, which share the common-drain dual N-channel enhancement mode architecture but may differ in specific current ratings or package configurations.
Replacement Considerations
Potential substitutes within the same product line include the AOC2800, AOC2804, and AOC2806. Verify pin compatibility and electrical parameter alignment before substitution.
