ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 4DFN
- Series：AlphaMOS
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：4-XDFN
- Supplier Device Package：4-DFN (1.5x1.5)
- Grade：-
- Qualification：-
Download product information
Overview
The AOC2804B is a dual N-channel AlphaMOS LV power MOSFET featuring a common-drain configuration. It utilizes trench technology to achieve low on-resistance, with RSS(ON) values ranging from less than 34mΩ at VGS=4.5V to 56mΩ at VGS=2.5V (IS=3A). The device supports a Source-Source voltage of 20V and operates within a junction temperature range of -55°C to 150°C. Packaged in an AlphaDFN 1.5x1.5_4 footprint, it offers thermal protection and RoHS compliance for compact circuit designs.
Feature Summary
- Dual N-channel architecture with common-drain configuration simplifies design implementation
- AlphaMOS LV trench technology provides low on-resistance across various gate voltages
- Fully protected AlphaDFN package ensures reliability and safety
Applications
- Typical ESD protection meeting HBM Class 3A standards
- Battery protection switches
- Mobile device battery charging and discharging circuits
Procurement Notes
Verify the specific ordering suffix and package form against official distributor catalogs before procurement. Confirm that the AlphaDFN 1.5x1.5_4 tape and reel quantity matches project requirements. Ensure component authenticity through authorized channels to maintain quality standards.
Selection Notes
Select this component for applications requiring low on-resistance at reduced gate drive voltages such as 2.5V or 3.1V. The common-drain topology is suitable for switching loads where source terminals are connected together. Evaluate thermal performance based on the specified junction-to-ambient resistance for the target PCB layout.
Part Context
This part belongs to the AlphaMOS LV series by Alpha & Omega Semiconductor Inc., designed for consumer market applications. It integrates dual FETs into a single compact surface-mount package to save board space while maintaining robust electrical characteristics for portable electronics.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Verify pinout compatibility and electrical ratings if considering alternative manufacturers.
FAQ
What is the maximum Source-Source voltage rating?
The absolute maximum Source-Source voltage (BVSSS) is rated at 20V.
How does the on-resistance vary with gate voltage?
RSS(ON) decreases as gate voltage increases, ranging from <56mΩ at VGS=2.5V to <34mΩ at VGS=4.5V when IS=3A.
Is this component suitable for life support devices?
No, the product is designed and qualified for the consumer market. Applications in life support devices or systems are not authorized.
