AOCA24106E

Overview

The AOCA24106E is a dual N-channel MOSFET array featuring trench power technology and a common-drain configuration. It operates with a source-source breakdown voltage of 12V and supports a continuous source current of 20A at 25°C. The device exhibits low on-resistance, specifically less than 5.6mΩ at VGS=4.5V and IS=4A. Integrated ESD protection meets HBM Class 3A standards. Packaged in an AlphaDFN 1.9x1.6_6 format, it provides a maximum junction temperature range of -55°C to 150°C.

Feature Summary

• Trench Power MOSFET Technology
• Low RSS(ON)
• With ESD protection to improve battery performance and safety
• Common drain configuration for design simplicity

Applications

• Battery protection switch
• Mobile device battery charging and discharging

Procurement Notes

Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation before procurement. Confirm that the package type matches the required AlphaDFN 1.9x1.6_6 footprint. Ensure compliance with RoHS and Halogen-Free standards as specified in the datasheet. Cross-reference absolute maximum ratings with system operating conditions to prevent component failure.

Selection Notes

Select this component for applications requiring a compact dual N-channel solution with integrated ESD protection. Evaluate the thermal characteristics, including the maximum junction-to-ambient thermal resistance, to ensure adequate heat dissipation within the target enclosure. Verify that the gate-source voltage requirements align with the control logic levels available in the host circuit design.

Part Context

This component belongs to the Alpha & Omega Semiconductor lineup of trench power MOSFETs designed for mobile electronics. It utilizes the AlphaDFN package to provide a small form factor suitable for space-constrained portable devices. The common-drain architecture simplifies circuit layout for battery management systems.

Replacement Considerations

No public confirmed substitute part numbers are documented.