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The AOCA32108E is a dual N-channel MOSFET array featuring a common-drain configuration and integrated ESD protection. It utilizes Alpha & Omega Semiconductor's trench power MOSFET technology to achieve ultra-low on-resistance, with RSS(ON) values below 3.8mΩ at VGS=4.5V and 5.6mΩ at VGS=2.5V. The device supports a continuous source current of 25A and operates within a junction temperature range of -55°C to 150°C. Packaged in an AlphaDFN 3.01x1.52B_10 format, it is designed for applications requiring battery protection switching and mobile device charging circuits.
Verify the specific ordering suffix and package form against official distributor catalogs before procurement. Confirm that the AlphaDFN 3.01x1.52B_10 package dimensions align with your PCB footprint requirements. Ensure compliance with RoHS and Halogen-Free standards as specified by the manufacturer for environmental regulations.
Select this component when low on-resistance at reduced gate voltages (e.g., 2.5V or 3.1V) is critical for efficiency. The common-drain topology suits designs where source terminals are shared. Verify thermal dissipation capabilities using the provided transient thermal impedance curves for pulsed operation scenarios.
This part belongs to Alpha & Omega Semiconductor's portfolio of discrete power devices. The company specializes in trench MOSFET technology for high-volume applications including consumer electronics and automotive systems. The AOCA32108E specifically targets mobile power management needs.
No public confirmed substitute part numbers are available in the provided documentation. Consult official AOS resources for potential cross-references.
The maximum forward source-to-source voltage (VFSS) is rated at 1V under typical conditions.
RSS(ON) decreases as gate voltage increases: <5.6mΩ at 2.5V, <4.6mΩ at 3.1V, <4mΩ at 3.8V, and <3.8mΩ at 4.5V.
No. Applications or uses as critical components in life support devices or systems are not authorized by Alpha & Omega Semiconductor.