AOCA32108E

AOCA32108E

$0.93
  • Description:MOSFET 2N-CH 12V 25A 10DFN
  • Series:-

SKU:833ad535c80c Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 12V 25A 10DFN
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Common Drain
  • FET Feature:-
  • Drain to Source Voltage (Vdss):12V
  • Current - Continuous Drain (Id) @ 25°C:25A (Ta)
  • Rds On (Max) @ Id, Vgs:3.8mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id:1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:32nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:3.1W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:10-SMD, No Lead
  • Supplier Device Package:10-AlphaDFN (3.01x1.52)
  • Grade:-
  • Qualification:-

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AOCA32108E

Overview

The AOCA32108E is a dual N-channel MOSFET array featuring a common-drain configuration and integrated ESD protection. It utilizes Alpha & Omega Semiconductor's trench power MOSFET technology to achieve ultra-low on-resistance, with RSS(ON) values below 3.8mΩ at VGS=4.5V and 5.6mΩ at VGS=2.5V. The device supports a continuous source current of 25A and operates within a junction temperature range of -55°C to 150°C. Packaged in an AlphaDFN 3.01x1.52B_10 format, it is designed for applications requiring battery protection switching and mobile device charging circuits.

Feature Summary

  • Ultra-low on-resistance achieved through trench power MOSFET technology
  • Integrated ESD protection to enhance battery performance and safety
  • Common-drain configuration simplifies circuit design

Applications

  • Battery protection switches
  • Mobile device battery charging circuits
  • Mobile device battery discharging circuits

Procurement Notes

Verify the specific ordering suffix and package form against official distributor catalogs before procurement. Confirm that the AlphaDFN 3.01x1.52B_10 package dimensions align with your PCB footprint requirements. Ensure compliance with RoHS and Halogen-Free standards as specified by the manufacturer for environmental regulations.

Selection Notes

Select this component when low on-resistance at reduced gate voltages (e.g., 2.5V or 3.1V) is critical for efficiency. The common-drain topology suits designs where source terminals are shared. Verify thermal dissipation capabilities using the provided transient thermal impedance curves for pulsed operation scenarios.

Part Context

This part belongs to Alpha & Omega Semiconductor's portfolio of discrete power devices. The company specializes in trench MOSFET technology for high-volume applications including consumer electronics and automotive systems. The AOCA32108E specifically targets mobile power management needs.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Consult official AOS resources for potential cross-references.

FAQ

What is the maximum forward source-to-source voltage?

The maximum forward source-to-source voltage (VFSS) is rated at 1V under typical conditions.

How does the on-resistance vary with gate voltage?

RSS(ON) decreases as gate voltage increases: <5.6mΩ at 2.5V, <4.6mΩ at 3.1V, <4mΩ at 3.8V, and <3.8mΩ at 4.5V.

Is this component suitable for life support devices?

No. Applications or uses as critical components in life support devices or systems are not authorized by Alpha & Omega Semiconductor.

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