AOCA33104E

Description：MOSFET 2N-CH 12V 30A 10DFN
Series：-

SKU:55c757c67277 Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 12V 30A 10DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：12V
Current - Continuous Drain (Id) @ 25°C：30A (Ta)
Rds On (Max) @ Id, Vgs：2.8mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：36nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：3.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：10-SMD, No Lead
Supplier Device Package：10-AlphaDFN (2.98x1.49)
Grade：-
Qualification：-

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AOCA33104E

Overview

The AOCA33104E is a dual N-channel MOSFET in an AlphaDFN package. It features ultra-low on-resistance, with RSS(ON) less than 2.8mΩ at VGS=4.5V and less than 4.2mΩ at VGS=2.5V. The device supports a source current of 30A DC and has a breakdown voltage of 12V. Operating temperature ranges from -55°C to 150°C. Key electrical parameters include a gate threshold voltage of 0.75V typical, total gate charge of 36nC, and forward transconductance of 40S.

Feature Summary

Dual common-drain configuration for simplified circuit design
Ultra-low on-resistance optimized for low-voltage operation
Trench power MOSFET technology for high efficiency

Applications

Battery protection switches
Mobile device battery charging circuits
Mobile device battery discharging circuits

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm package type and reel specifications. Ensure compliance with RoHS and halogen-free requirements as stated in the datasheet. Confirm that the AlphaDFN 2.98x1.49_10 package dimensions match your PCB layout constraints before finalizing procurement.

Selection Notes

Select this component for applications requiring low voltage switching with minimal power loss. The dual common-drain architecture allows for shared source connections, reducing board space. Verify that the required gate drive voltage aligns with the specified thresholds for optimal on-resistance performance.

Part Context

This part belongs to Alpha & Omega Semiconductor's portfolio of trench power MOSFETs. It is designed specifically for portable electronics where space and efficiency are critical. The AlphaDFN package provides thermal performance suitable for mobile device applications.