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Product Detailed Parameters
- Description：MOSFET N-CH 700V 3.8A TO252
- Series：aMOS™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：700 V
- Current - Continuous Drain (Id) @ 25°C：3.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.4Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：4.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：354 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：48W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The AOD1R4A70 is a single N-channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a drain-source voltage (Vdss) of 700 V and a continuous drain current (Id) of 3.8 A at case temperature. The device utilizes a TO-252 surface-mount package with a maximum power dissipation of 48 W. Key electrical parameters include a gate threshold voltage (Vgs(th)) of 4.1 V maximum at 250 µA, a gate charge (Qg) of 10 nC maximum at 10 V, and an input capacitance (Ciss) of 461 pF maximum at 100 V. The operating junction temperature range spans from -55°C to 150°C.
Feature Summary
- N-channel enhancement mode MOSFET technology
- High voltage capability for robust switching applications
- Surface-mount TO-252 package design
Applications
- Power supply circuits
- Motor control systems
- Industrial automation equipment
Procurement Notes
Verify the specific manufacturer part number against official Alpha & Omega Semiconductor documentation to confirm exact specifications. Check component lifecycle status as availability may vary. Ensure compatibility with required thermal management solutions for the TO-252 package. Confirm RoHS compliance requirements for your specific application standards before procurement.
Selection Notes
Select this component based on its 700 V rating and 3.8 A current capacity suitable for high-voltage switching tasks. Consider the TO-252 package for surface-mount assembly constraints. Evaluate thermal performance requirements against the 48 W dissipation limit. Compare gate charge characteristics with driver capabilities to ensure efficient switching speeds in the target circuit design.
Part Context
This component belongs to the Alpha & Omega Semiconductor discrete semiconductor product line, specifically within the single FET/MOSFET category. It is designed for general-purpose power switching applications requiring high voltage isolation. The manufacturer specializes in power management solutions, and this part represents their standard N-channel MOSFET offerings in the TO-252 form factor.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source data. Verify pinout compatibility and electrical parameter overlaps with potential alternatives from other manufacturers before substitution.
