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The AOD2610E is a 60V N-Channel MOSFET utilizing AlphaSGT technology. It features a maximum drain-source voltage of 60V and a continuous drain current of 46A at VGS=10V. The on-resistance is less than 9.5mΩ at VGS=10V and less than 13.3mΩ at VGS=4.5V. The device includes typical ESD protection rated at HBM Class 2. It is designed for high efficiency power supplies and secondary synchronous rectification applications.
Verify the specific package variant required, as the AOD2610E designation corresponds to the TO-252 form factor. Confirm that the AOI2610E or AOY2610E variants are not needed if different packaging such as TO-251A or tape-and-reel formats are preferred. Ensure all procurement specifications align strictly with the manufacturer's official ordering information.
Select this component when a 60V rating and high current handling capability near 46A are required. Consider the low on-resistance values for minimizing conduction losses in synchronous rectification topologies. Evaluate thermal management needs based on the junction-to-case resistance provided in the datasheet for the specific mounting configuration.
This part belongs to the AlphaSGT family of N-Channel MOSFETs from Alpha & Omega Semiconductor. It shares technological foundations with other devices in the series but offers specific electrical parameters tailored for robust power switching applications. The product line emphasizes efficiency through advanced trench technology.
Cross-reference with AOI2610E and AOY2610E if alternative packaging types like TO-251A or tape-and-reel delivery are necessary while maintaining identical electrical performance.