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The AOD2N60 is a surface-mount N-channel MOSFET from Alpha & Omega Semiconductor Inc., housed in a TO-252 (DPAK) package. It features a drain-source voltage of 600 V and a continuous drain current of 2 A at 25°C case temperature. The device exhibits a maximum on-resistance of 4.4 Ω at VGS=10V and ID=1A, with a gate charge of 11 nC at 10 V. It supports a junction temperature range of -50°C to 150°C and includes guaranteed avalanche capability.
Verify the component status before integration, as it may be marked unsuitable for new designs. Confirm that the specific ordering suffix matches the required packaging format. Ensure compliance with RoHS3 standards and check for any recent product change notices regarding manufacturing location or specifications prior to final procurement.
Select this component for applications requiring a 600 V rating with moderate current handling in a compact surface-mount form factor. Consider the thermal resistance values when designing heatsinking solutions. Verify that the gate drive voltage aligns with the specified 10 V threshold for optimal on-resistance performance.
This part belongs to the AOD2 series of N-channel MOSFETs manufactured by Alpha & Omega Semiconductor Inc. It shares the TO-252 package footprint with other variants in the lineup but is distinguished by its specific 600 V breakdown voltage and 2 A current rating parameters.
Check for direct substitutes within the same manufacturer's portfolio that share identical pinouts and electrical ratings. Verify compatibility with existing PCB layouts and thermal management requirements when considering alternative components.
Yes, the datasheet confirms that the device undergoes 100% UIS testing and offers guaranteed avalanche energy capability.
The absolute maximum rating for the gate-source voltage is ±30 V.