AOD3N80

$1.73

Description：MOSFET N-CH 800V 2.8A TO252
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b447dd2de978 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 800V 2.8A TO252
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：800 V
Current - Continuous Drain (Id) @ 25°C：2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4.8Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id：4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：510 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：83W (Tc)
Operating Temperature：-50°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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AOD3N80

Overview

The AOD3N80 is an N-channel MOSFET fabricated using an advanced high-voltage process, rated for a drain-source voltage of 800V and a continuous drain current of 2.8A at 25°C. It features a maximum on-resistance of less than 4.8W at VGS=10V and supports a peak diode recovery dv/dt of 5V/ns. The device includes guaranteed avalanche capability with repetitive energy ratings up to 72mJ and single-pulse ratings up to 145mJ. Thermal characteristics include a junction-to-case resistance of 1.5°C/W and a junction-to-ambient resistance of 55°C/W.

Feature Summary

Guaranteed avalanche capability verified through 100% UIS testing.
High robustness in AC-DC applications due to advanced high-voltage MOSFET fabrication.
Optimized low input capacitance and reverse transfer capacitance for efficient switching.

Applications

Offline power supply designs
AC-DC converter circuits

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing design specifications. Confirm that the TO252 package dimensions align with the target PCB footprint requirements. Ensure thermal management strategies account for the specified junction-to-ambient and junction-to-case thermal resistances under intended operating conditions.

Selection Notes

Select this component for applications requiring high voltage blocking capabilities combined with moderate current handling in compact surface-mount packages. Consider the guaranteed avalanche rating when designing circuits subject to inductive load switching or transient voltage spikes. Evaluate the gate charge parameters to ensure compatibility with available driver circuitry for optimal switching performance.

Part Context

This part belongs to the Alpha & Omega Semiconductor lineup of high-voltage discrete semiconductors designed for power conversion. It utilizes the company's proprietary high-voltage MOSFET technology to balance conduction losses with switching speed. The TO252 (DPAK) package provides a cost-effective solution for medium-power applications where board space is limited but thermal dissipation remains a critical design factor.