AOD413

$0.20

Description：MOSFET P-CH 40V 24A TO252
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:26a7c84af78e Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 40V 24A TO252
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：24A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：45mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：850 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 50W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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AOD413

Overview

The AOD413 is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The device features a Drain-Source Voltage (VDS) of -40V and a continuous Drain Current (ID) of -24A at VGS = -10V. On-resistance (RDS(ON)) is less than 45mΩ at VGS = -10V and less than 69mΩ at VGS = -4.5V. It is housed in a TO-252 (D-PAK) package with a maximum junction temperature of 175°C.

Feature Summary

Advanced trench technology provides excellent RDS(ON), low gate charge, and low gate resistance.
High thermal resistance capability of the DPAK package suits high current load applications.
Verified for 100% Unclamped Inductive Switching (UIS) testing.
Verified for 100% Gate Resistance (Rg) testing.

Applications

High current load applications
Power management circuits requiring P-Channel switching

Procurement Notes

Verify the specific datasheet revision and data code when ordering, as environmental compliance such as halogen-free status may depend on the manufacturing date code. Confirm that the TO-252 package variant matches your PCB footprint requirements. Ensure that the supplier provides documentation confirming the component meets the absolute maximum ratings specified in the official Alpha & Omega Semiconductor datasheet for reliable integration into life support or critical systems.

Selection Notes

Select this component for designs requiring a -40V P-Channel MOSFET with moderate current handling capabilities up to -24A. Consider the thermal performance characteristics provided in the datasheet curves when designing heat dissipation strategies. Verify that the gate drive voltage levels align with the specified thresholds for optimal RDS(ON) performance. Ensure the application does not exceed the single-pulse avalanche energy limits defined in the electrical characteristics.

Part Context

This part belongs to the Alpha & Omega Semiconductor lineup of P-Channel Enhancement Mode Field Effect Transistors. It is designed using trench technology to optimize conduction losses and switching speeds. The device is intended for use in power switching applications where efficient thermal management and robust avalanche capability are required. It is RoHS compliant and halogen-free for specific data codes.