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Product Detailed Parameters
- Description：MOSFET N-CH 30V 17A TO252
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1500 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：32W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The AOD4158 is an N-channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 20A at case temperature. The device utilizes the aMOS™ technology and is housed in a TO-252 (DPAK) surface-mount package. Key electrical characteristics include a maximum gate-source voltage (Vgs) of ±30V, a threshold voltage (Vgs(th)) of 4V at 250µA, and a gate charge (Qg) of 9.2nC at 10V. The input capacitance (Ciss) is specified as 434pF at 100V. The component supports a junction temperature range from -55°C to 150°C and has a power dissipation rating of 89W at case temperature.
Feature Summary
- N-channel enhancement mode MOSFET utilizing aMOS™ technology for efficient power switching
- High thermal performance with a power dissipation rating of 89W at case temperature
- Robust voltage handling capability with a 60V drain-source breakdown voltage
- Suitable for high-current applications with a 20A continuous drain current rating
Applications
- DC-DC converter circuits
- Power management systems
- Motor control applications
Procurement Notes
Verify the specific datasheet version and manufacturing origin when sourcing this component. Confirm that the received parts match the Alpha & Omega Semiconductor Inc. marking and package specifications. Ensure compliance with RoHS directives if required by your design standards. Check for any recent product change notices or lifecycle status updates directly from the manufacturer before finalizing procurement plans.
Selection Notes
Select the AOD4158 for designs requiring a 60V N-channel MOSFET with high current capacity in a TO-252 package. Consider its 89W thermal dissipation capability for heat-intensive environments. Evaluate the 4V threshold voltage against your driver logic levels to ensure reliable switching. Compare its gate charge and capacitance parameters with alternative devices to optimize switching speed and drive requirements in your specific circuit topology.
Part Context
The AOD4158 belongs to the aMOS™ family of power MOSFETs from Alpha & Omega Semiconductor Inc. This series is designed for general-purpose power switching applications. The TO-252 (DPAK) package provides a balance between current handling and board space efficiency. It is part of a broader portfolio of discrete semiconductors used in consumer electronics, computing, and industrial systems.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter margins before considering any alternative components.
