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The AOD4158P is a 30V N-Channel AlphaMOS power MOSFET manufactured by Alpha & Omega Semiconductor Inc. It utilizes the latest Trench Power MOSFET technology to achieve very low on-resistance at both 10V and 4.5V gate-source voltages, alongside low gate charge and high current capability. The device is housed in a TO252 (DPAK) surface-mount package. Key electrical parameters include a drain-source breakdown voltage of 30V, a continuous drain current of 46A at 25°C case temperature, and a maximum junction-to-case thermal resistance of 3.7°C/W.
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm RoHS and Halogen-Free compliance status as specified in the datasheet. Ensure the TO252 (DPAK) package matches your PCB footprint requirements. Validate that the specific lot code aligns with current production standards to avoid obsolete inventory risks.
Select this component when designing circuits requiring a 30V N-channel MOSFET with high current capacity up to 46A. It is suitable for applications needing low conduction losses at 4.5V drive levels. Consider its thermal characteristics, specifically the 3.7°C/W junction-to-case resistance, for effective heatsinking strategies in dense layouts.
This part belongs to the AlphaMOS series from Alpha & Omega Semiconductor Inc., focusing on power management solutions. The company specializes in semiconductor devices for consumer electronics, computing, and industrial systems. The AOD4158P represents their trench technology implementation aimed at improving efficiency in power conversion stages.
No public confirmed substitute part numbers are available in the provided documentation.