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The AOD417 is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver low gate charge and resistance alongside excellent on-resistance. The device features a Drain-Source Voltage (VDS) of -30V and a continuous Drain Current (ID) of -25A at VGS=-10V. Static Drain-Source On-Resistance (RDS(ON)) is less than 34mΩ at VGS=-10V and less than 55mΩ at VGS=-4.5V. It is housed in a DPAK (TO-252) package, rated for junction temperatures up to 175°C, and includes 100% UIS and Rg testing.
Verify the specific datasheet revision and manufacturing date code upon procurement. Confirm RoHS compliance status, as green guarantees apply only after data code 8X11. Ensure the component matches the TO-252 DPAK physical footprint. Validate that the intended application falls within the consumer market scope, as life support systems are explicitly excluded from authorization.
Select this component for designs requiring a -30V P-Channel MOSFET with high current handling capabilities. Consider the thermal characteristics when designing heat dissipation strategies, noting the maximum junction temperature limit. Verify that the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance. Ensure the PCB layout supports the required thermal impedance for steady-state operation.
This part belongs to the Alpha & Omega Semiconductor power MOSFET portfolio, which integrates design, wafer fabrication, and packaging. The company focuses on power semiconductors including MOSFETs and IGBTs. The AOD417 specifically addresses the need for efficient power switching in consumer electronics through its optimized trench structure and robust packaging.
No public substitute part numbers are documented in the provided source material.