AOD450A70

$0.60

Description：N
Series：aMOS5™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:f2278f83d52f Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：N
Series：aMOS5™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：700 V
Current - Continuous Drain (Id) @ 25°C：11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：450mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id：3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1115 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：125W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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AOD450A70

Overview

The AOD450A70 is a 700V N-Channel Power Transistor from Alpha & Omega Semiconductor, utilizing aMOS5 technology. It features a maximum drain-source voltage of 800V and a continuous drain current of 11A at case temperature. The device has a maximum on-resistance of 0.45Ω at VGS=10V and ID=5.5A. Key dynamic parameters include a total gate charge of 20nC and a body diode reverse recovery time of 275ns. It is available in the TO-252 (DPAK) surface-mount package.

Feature Summary

High-voltage capability with 700V rating and 800V breakdown voltage for robust operation
Low on-resistance design to minimize conduction losses in power stages
Optimized gate charge characteristics for efficient switching performance
Integrated body diode with defined reverse recovery specifications

Applications

PFC and PWM stages in adapters
Flyback and LLC converter topologies
Server and gaming power supplies
Industrial power conversion systems
TV and lighting power units

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm datasheet revision status matches project requirements. Ensure proper handling procedures are followed due to static sensitivity. Validate thermal management designs against junction-to-case resistance values provided in official documentation before finalizing implementation.

Selection Notes

Evaluate thermal dissipation capabilities based on application-specific heatsinking requirements. Compare gate charge values against driver output capabilities to ensure adequate switching speeds. Assess safe operating area limits under expected load conditions. Consider package thermal resistance when designing PCB copper layouts for optimal heat transfer.

Part Context

This component belongs to the aMOS5 series of N-channel power transistors designed by Alpha & Omega Semiconductor. The series focuses on high-efficiency power conversion applications requiring reliable high-voltage switching. The AOD450A70 variant specifically targets surface-mount implementations in compact power supply designs.