AOD4T60P

AOD4T60P

  • Description:MOSFET N-CH 600V 4A TO252
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)

SKU:c53cd720a91b Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET N-CH 600V 4A TO252
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:2.1Ohm @ 2A, 10V
  • Vgs(th) (Max) @ Id:5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:522 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):83W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252 (DPAK)
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

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AOD4T60P

Overview

The AOD4T60P is a 600V N-Channel MOSFET utilizing AlphaMOS-II trench technology in a TO-252 (DPAK) package. It features a maximum drain-source voltage of 700V, continuous drain current of 4A at 25°C case temperature, and pulsed drain current of 30A. The device exhibits a maximum on-resistance of 2.1Ω at VGS=10V and ID=4A. Key electrical parameters include a typical gate charge of 8.3nC, input capacitance of 522pF, and reverse transfer capacitance of 2pF. Thermal characteristics specify a junction-to-case resistance of 1.5°C/W and a power dissipation rating of 83W at 25°C case temperature.

Feature Summary

  • Incorporates AlphaMOS-II trench technology for low on-resistance and high current capability.
  • Demonstrates dv/dt ruggedness with a peak diode recovery rating of 500 V/ns.
  • Subjected to 100% testing for unclamped inductive switching (UIS) and gate resistance.

Applications

  • General lighting for LED and CCFL
  • AC/DC power supplies for industrial applications
  • AC/DC power supplies for consumer electronics
  • AC/DC power supplies for telecom equipment

Procurement Notes

Verify the specific ordering suffix to confirm the package type and reel specifications. The standard AOD4T60P designation corresponds to the TO-252 tape and reel configuration. Confirm that the component meets RoHS and halogen-free compliance requirements as stated in the datasheet. Ensure the application environment remains within the specified consumer market scope, as critical life support uses are not authorized.

Selection Notes

Select this component for designs requiring a 600V blocking capability with moderate current handling up to 4A. The TO-252 package offers a balance between thermal performance and surface mount convenience. Consider the 2.1Ω maximum on-resistance when calculating conduction losses at the target operating current. Verify that the driver can supply sufficient gate charge to achieve the specified switching speeds.

Part Context

This part belongs to the Alpha & Omega Semiconductor discrete power device portfolio, which targets high-volume applications including personal computers, data centers, and automotive electronics. The manufacturer differentiates its products by integrating discrete process technology with advanced packaging know-how to develop high-performance power management solutions.

Replacement Considerations

The AOI4T60P serves as a functional equivalent variant featuring the same electrical specifications but packaged in a TO-251A tube instead of the TO-252 tape and reel format.

FAQ

What is the maximum body-diode continuous current rating?

The maximum body-diode continuous current (IS) is rated at 4A.

Is the device qualified for unclamped inductive switching?

Yes, the datasheet confirms that 100% of the devices are tested for unclamped inductive switching (UIS).

What is the peak diode recovery dv/dt rating?

The MOSFET dv/dt ruggedness provides a peak diode recovery dv/dt rating of 500 V/ns.

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