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The AOD4T60P is a 600V N-Channel MOSFET utilizing AlphaMOS-II trench technology in a TO-252 (DPAK) package. It features a maximum drain-source voltage of 700V, continuous drain current of 4A at 25°C case temperature, and pulsed drain current of 30A. The device exhibits a maximum on-resistance of 2.1Ω at VGS=10V and ID=4A. Key electrical parameters include a typical gate charge of 8.3nC, input capacitance of 522pF, and reverse transfer capacitance of 2pF. Thermal characteristics specify a junction-to-case resistance of 1.5°C/W and a power dissipation rating of 83W at 25°C case temperature.
Verify the specific ordering suffix to confirm the package type and reel specifications. The standard AOD4T60P designation corresponds to the TO-252 tape and reel configuration. Confirm that the component meets RoHS and halogen-free compliance requirements as stated in the datasheet. Ensure the application environment remains within the specified consumer market scope, as critical life support uses are not authorized.
Select this component for designs requiring a 600V blocking capability with moderate current handling up to 4A. The TO-252 package offers a balance between thermal performance and surface mount convenience. Consider the 2.1Ω maximum on-resistance when calculating conduction losses at the target operating current. Verify that the driver can supply sufficient gate charge to achieve the specified switching speeds.
This part belongs to the Alpha & Omega Semiconductor discrete power device portfolio, which targets high-volume applications including personal computers, data centers, and automotive electronics. The manufacturer differentiates its products by integrating discrete process technology with advanced packaging know-how to develop high-performance power management solutions.
The AOI4T60P serves as a functional equivalent variant featuring the same electrical specifications but packaged in a TO-251A tube instead of the TO-252 tape and reel format.
The maximum body-diode continuous current (IS) is rated at 4A.
Yes, the datasheet confirms that 100% of the devices are tested for unclamped inductive switching (UIS).
The MOSFET dv/dt ruggedness provides a peak diode recovery dv/dt rating of 500 V/ns.