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The AOD522P is a 30V N-Channel AlphaMOS power MOSFET in a TO-252 (DPAK) package. It features a maximum drain-source voltage of 30V and continuous drain current ratings of 46A at TC=25°C and 36A at TA=70°C. The device exhibits low on-resistance, with RDS(on) less than 5.2mΩ at VGS=10V and less than 9.5mΩ at VGS=4.5V. It includes an integrated body diode with a continuous source-drain current of 46A. The component is designed for high current capability and low gate charge applications.
Verify the specific ordering suffix to ensure correct packaging configuration, as variations may exist within the product line. Confirm that the procurement channel provides official manufacturer documentation or authorized distributor status to guarantee component authenticity. Check for any recent Product Change Notices regarding material or process updates. Ensure storage and handling procedures comply with moisture sensitivity level requirements to prevent damage prior to soldering.
Select this component for designs requiring robust N-channel switching with low conduction losses at standard logic-level gate voltages. The TO-252 package offers a balance between thermal dissipation capabilities and surface-mount footprint constraints. Evaluate the junction-to-case thermal resistance against the specific heatsinking strategy employed in the target application to ensure safe operating area compliance under steady-state and pulsed load conditions.
This part belongs to the AlphaMOS series from Alpha & Omega Semiconductor Inc., focusing on trench technology power MOSFETs. The TO-252 form factor is widely used in power electronics where moderate current handling and efficient heat transfer are required without the complexity of through-hole mounting. It serves as a discrete solution for power stages in various conversion topologies.
Public confirmed substitute part numbers: None available.