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The AOD5T40P is a 400V N-Channel MOSFET utilizing AlphaMOS-II trench technology. It features a maximum drain-source voltage of 500V, continuous drain current of 3.9A at 25°C case temperature, and peak pulsed drain current of 15A. The device exhibits a maximum on-resistance of 1.45Ω at VGS=10V and ID=3.9A. Key electrical parameters include a typical gate charge of 5nC, input capacitance of 273pF, and body-diode reverse recovery time of 172ns. Thermal characteristics specify a junction-to-case resistance of 2.4°C/W and junction-to-ambient resistance of 55°C/W.
Verify the specific ordering suffix to confirm package type and reel specifications. Confirm RoHS compliance status as required by project standards. Ensure the component meets the intended thermal dissipation requirements given the TO-252 package constraints. Validate that the device rating aligns with the target circuit's voltage and current demands before integration.
Select this component for designs requiring moderate voltage blocking with efficient switching characteristics. The low gate charge supports higher frequency operation in power conversion circuits. Consider the thermal resistance values when designing heatsinking solutions for continuous load conditions. Verify compatibility with standard drive voltages for optimal on-state performance.
This part belongs to the AOD series of N-Channel MOSFETs manufactured by Alpha & Omega Semiconductor. It is housed in a TO-252 (DPAK) surface-mount package. The device is designed for general-purpose switching applications within the consumer and industrial sectors.
No public substitute part numbers are documented.