ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 700V 8.5A TO252
- Series：aMOS5™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：700 V
- Current - Continuous Drain (Id) @ 25°C：8.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：600mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：870 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：104W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Download product information
Overview
The AOD600A70 is a 700V N-Channel Power MOSFET from Alpha & Omega Semiconductor, utilizing aMOS5 technology. It features a maximum drain-source voltage of 800V and a continuous drain current of 8.5A at 25°C case temperature. The device exhibits a maximum on-resistance of 0.6Ω at VGS=10V and ID=2.5A. Key dynamic parameters include a total gate charge of 15.5nC and an input capacitance of 870pF. Thermal performance includes a junction-to-case resistance of 1.2°C/W and a power dissipation rating of 104W. The component operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- High-voltage capability with 700V breakdown and 800V rated drain-source voltage for robust operation in high-stress environments.
- Optimized switching characteristics through low gate charge and fast turn-on/turn-off times to minimize switching losses.
- Enhanced ruggedness featuring dv/dt immunity and repetitive avalanche energy ratings for reliable performance under inductive loads.
Applications
- High-voltage DC-DC converters
- Power factor correction circuits
- Industrial motor drives
Procurement Notes
Verify the specific package variant required, as the datasheet covers both TO-252 (AOD) and TO-251A (AOI) configurations. Confirm that the selected part meets all applicable export control regulations and legal requirements before integration. Evaluate product suitability for intended applications independently, as liability for life support systems is explicitly excluded by the manufacturer.
Selection Notes
Select this component for designs requiring high voltage isolation and moderate current handling in surface-mount form factors. Consider the thermal resistance values when designing heatsinking solutions, as power dissipation limits are tied to junction temperature constraints. Ensure gate drive voltages align with the specified thresholds to maintain optimal on-resistance and switching efficiency.
Part Context
This device belongs to the aMOS5 series of N-channel power transistors from Alpha & Omega Semiconductor. It is designed to offer improved performance over previous generations in terms of switching speed and thermal management. The product line targets efficient power conversion in industrial and consumer electronics applications requiring reliable high-voltage switching capabilities.
Replacement Considerations
The AOI600A70 serves as a pin-compatible alternative with a different package outline (TO-251A vs TO-252). Verify mechanical footprint compatibility before substitution. No other direct electrical substitutes are confirmed in the provided documentation.
FAQ
What is the maximum drain-source voltage rating?
The absolute maximum drain-source voltage (BVDSS) is rated at 800V.
How does the on-resistance vary with temperature?
The on-resistance increases with junction temperature, exhibiting a positive temperature coefficient of approximately 0.6 V/°C for the threshold voltage, which influences conduction losses at higher temperatures.
