ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：N
- Series：AlphaSGT™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：700 V
- Current - Continuous Drain (Id) @ 25°C：7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：780mOhm @ 1.4A, 10V
- Vgs(th) (Max) @ Id：4.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：675 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：83W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Download product information
Overview
The AOD780A70 is an N-channel power MOSFET from Alpha & Omega Semiconductor, utilizing aMOS5 technology. It features a drain-source voltage (VDS) of 700 V and a maximum gate-source voltage (VGS) of ±20 V. The device supports a continuous drain current (ID) of 7 A at case temperature and a pulsed current (IDM) of 28 A. Key electrical parameters include a maximum on-resistance (RDS(ON)) of 0.78 Ω at VGS=10 V and ID=1.4 A, with a total gate charge (Qg) of 11.5 nC. It operates within a junction temperature range of -55°C to 150°C and is housed in a TO-252 (DPAK) surface-mount package.
Feature Summary
- High-voltage capability with 700 V drain-source breakdown voltage for robust operation in demanding power environments.
- Advanced aMOS5™ process technology designed to optimize the balance between low conduction losses and fast switching performance.
- Integrated body diode with defined reverse recovery characteristics suitable for hard-switching applications.
Applications
- High-voltage DC-to-DC converter circuits
- Power factor correction (PFC) stages
- Motor control systems
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets RoHS3 compliance requirements for your target market. Review the datasheet thermal derating curves to validate heat dissipation capabilities under your specific operating conditions before finalizing procurement.
Selection Notes
Select this component when designing circuits requiring high blocking voltage combined with moderate current handling in a compact surface-mount footprint. Evaluate the thermal resistance values provided in the datasheet to determine necessary heatsinking or PCB copper area. Ensure the gate drive voltage aligns with the specified RDS(ON) test conditions to achieve optimal efficiency.
Part Context
This part belongs to the AOD780 series of N-channel power transistors manufactured by Alpha & Omega Semiconductor. It shares core electrical specifications with the AOI780A70 but differs in physical package configuration. The series utilizes the company's proprietary aMOS5™ silicon process to deliver high-performance switching capabilities for industrial and consumer power supply designs.
Replacement Considerations
The AOI780A70 is a documented equivalent offering identical electrical characteristics in a different package format. Verify pinout compatibility and thermal management requirements when substituting packages. No other direct substitutes are confirmed in the provided source material.
