AOD7S65

$1.94

Description：MOSFET N-CH 650V 7A TO252
Series：aMOS™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:dd3e3cb92c98 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 650V 7A TO252
Series：aMOS™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：650mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.2 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：434 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：89W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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AOD7S65

Overview

The AOD7S65 is a 650V N-channel power MOSFET from Alpha & Omega Semiconductor, utilizing the aMOS™ high-voltage process. It features a TO-252 (DPAK) surface-mount package with a maximum continuous drain current of 7A at 25°C case temperature and a pulsed drain current of 30A. The device guarantees a maximum on-resistance of 0.65Ω at 10V gate drive and 3.5A drain current. Key electrical parameters include a typical total gate charge of 9.2nC, an avalanche energy rating of 86mJ, and a dv/dt ruggedness of 30V/ns. It supports a junction temperature range of -55°C to 150°C.

Feature Summary

Fabricated using advanced aMOS™ high-voltage technology for robust switching performance.
Features low on-resistance and gate charge to facilitate rapid adoption in offline power supply designs.
Includes guaranteed avalanche capability and 100% UIS testing for enhanced reliability.

Applications

Offline power supply designs
Switching applications requiring high voltage ruggedness

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm that the specific revision matches the required datasheet version. Ensure proper handling procedures are followed due to the sensitivity of semiconductor devices. Check for RoHS compliance status if environmental regulations apply to the final assembly. Validate thermal management requirements against the specified junction-to-case resistance.

Selection Notes

Select this component for designs requiring 650V blocking capability with moderate current handling. Consider the TO-252 package for surface-mount PCB layouts where space efficiency is prioritized. Evaluate the thermal dissipation characteristics against the expected operating load to ensure the junction temperature remains within safe limits during continuous operation.

Part Context

This part belongs to the aMOS™ family of high-voltage transistors designed by Alpha & Omega Semiconductor. It shares architectural similarities with other members like the AOI7S65 but differs in physical packaging. The series emphasizes reliability through rigorous testing protocols including uniformity in gate resistance and avalanche endurance.

Replacement Considerations

Direct substitutes may include other 650V N-channel MOSFETs in TO-252 packages with comparable RDS(on) and current ratings. Verify pinout compatibility and thermal resistance values before implementation.